Highly Conformal Amorphous W-Si-N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization

Title
Highly Conformal Amorphous W-Si-N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
Author(s)
김수현홍태은[홍태은]정재훈여승민천태훈배소익여소정[여소정]김효석[김효석]정택모[정택모]박보근[박보근]김창균[김창균]이도중[이도중]
Keywords
COPPER METALLIZATION; STRUCTURAL-PROPERTIES; GROWTH; WF6; PRECURSOR; SURFACE; WNXCY; B2H6; TI; TEMPERATURE
Issue Date
201501
Publisher
AMER CHEMICAL SOC
Citation
JOURNAL OF PHYSICAL CHEMISTRY C, v.119, no.3, pp.1548 - 1556
Abstract
Ternary and amorphous tungsten silicon nitride (W-Si-N) thin films were grown by atomic layer deposition (ALD) using a sequential supply of a new fluorine-free, silylamide-based W metallorganic precursor, bis(tert-butylimido)bis(bis(trimethylsilylamido))tungsten(VI) [W(NtBu)(2){N(SiMe3)(2)}(2)], and H-2 plasma at a substrate temperature of 300 degrees C. Here, W(NtBu)(2){N(SiMe3)(2)}(2) was prepared through a metathesis reaction of W(NtBu)(2)Cl-2(py)(2) (py = pyridine) with 2 equiv of LiN(SiMe3)2 [Li(btsa)]. The newly proposed ALD system exhibited typical ALD characteristics, such as self-limited film growth and linear dependency of the film growth on the number of ALD cycles, and showed a high growth rate of 0.072 nm/cycle on a thermally grown SiO2 substrate with a nearly zero incubation cycle. Such ideal ALD growth characteristics enabled excellent step coverage of ALD-grown W-Si-N film, similar to 100%, onto nanotrenches with a width of 25 nm and an aspect ratio similar to 4.5. Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy analysis confirmed that the incorporated Si and W were mostly bonded to N, as in Si-N and W-N chemical bonds. The film kept its amorphous nature until annealing at 800 degrees C, and crystallization happened at local areas after annealing at a very high temperature of 900 degrees C. An ultrathin (only similar to 4 nm thick) ALD-grown W-Si-N film effectively prevented diffusion of Cu into Si after annealing at a temperature up to 600 degrees C.
URI
http://hdl.handle.net/YU.REPOSITORY/33724http://dx.doi.org/10.1021/jp510226g
ISSN
1932-7447
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공과대학 > 신소재공학부 > Articles
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