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dc.contributor.author김수현ko
dc.contributor.author김도영[김도영]ko
dc.contributor.author김형준[김형준]ko
dc.date.accessioned2015-12-17T05:08:38Z-
dc.date.available2015-12-17T05:08:38Z-
dc.date.created2015-11-13-
dc.date.issued201501-
dc.identifier.citationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.29, pp.139 - 142-
dc.identifier.issn1369-8001-
dc.identifier.urihttp://hdl.handle.net/YU.REPOSITORY/33706-
dc.identifier.urihttp://dx.doi.org/10.1016/j.mssp.2014.01.016-
dc.description.abstractWe investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis (dimethylamino) dimethylsilane ( BDMADMS) and a hydrogen plasma. ASiN(x)C(y) sealing layer grown by PE-ALD was formed without any penetration of the pores with in the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material. (C) 2014 Elsevier Ltd. All rights reserved.-
dc.language영어-
dc.publisherELSEVIER SCI LTD-
dc.subjectLOW-K-
dc.subjectVAPOR-DEPOSITION-
dc.subjectBARRIER PROPERTIES-
dc.subjectCONSTANT POLYMERS-
dc.subjectFILMS-
dc.subjectTAN-
dc.subjectCU-
dc.titleThe formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique-
dc.typeArticle-
dc.identifier.wosid000345645500016-
dc.identifier.scopusid2-s2.0-84915816856-
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