The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique

Title
The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique
Author(s)
김수현김도영[김도영]김형준[김형준]
Keywords
LOW-K; VAPOR-DEPOSITION; BARRIER PROPERTIES; CONSTANT POLYMERS; FILMS; TAN; CU
Issue Date
201501
Publisher
ELSEVIER SCI LTD
Citation
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.29, pp.139 - 142
Abstract
We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis (dimethylamino) dimethylsilane ( BDMADMS) and a hydrogen plasma. ASiN(x)C(y) sealing layer grown by PE-ALD was formed without any penetration of the pores with in the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material. (C) 2014 Elsevier Ltd. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/33706http://dx.doi.org/10.1016/j.mssp.2014.01.016
ISSN
1369-8001
Appears in Collections:
공과대학 > 신소재공학부 > Articles
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