Photoluminescence imaging of Eu(III) and Tb(III)-embedded SiO2 nanostructures
- Photoluminescence imaging of Eu(III) and Tb(III)-embedded SiO2 nanostructures
- 손영구; 최영인; 윤영혜; 강준길[강준길]
- LUMINESCENCE PROPERTIES; TB3+; NANOCRYSTALS; PARTICLES; NANOPARTICLES; NANOSPHERES; EUROPIUM; EU3+; GEL; MICROSPHERES
- Issue Date
- ELSEVIER SCIENCE BV
- JOURNAL OF LUMINESCENCE, v.158, pp.27 - 31
- We prepared SiO2 embedded with Eu(III) and Tb(III) by a modified after method. The nanostructures were highly thermal stable and showed a significant enhancement in photoluminescence after thermal annealing at above 600 degrees C. Emissions by indirect charge transfer excitation were much stronger than those in response to a direct excitation transition. 2D and 3D-photoluminescence image profiles were fully examined, and the emissions of Eu(III) observed between 570 and 720 nm and Tb(III) between 450 and 700 nm were attributed to the D-5(0)-> F-7(J) (J=0,1,2,3,4) and D-5(4)-> F-7(J) (J=6,5,4,3) transitions, respectively. The Eu(III) and Tb(III) appeared to be embedded at sites with lower symmetry without an inversion center. In the SiO2 matrix, the oxidation states of Eu(III) and Tb(III) showed no change, even after thermal annealing. The present study describes an effective methodology for developing efficient light emitting materials using an activator ion-embedded silica structure. (C) 2014 Elsevier B.V. All rights reserved.
- Appears in Collections:
- 이과대학 > 화학생화학부 > Articles
문과대학 > 중국언어문화학과 > Articles
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)