Ultrasmooth, High Electron Mobility Amorphous In-Zn-O Films Grown by Atomic Layer Deposition

Title
Ultrasmooth, High Electron Mobility Amorphous In-Zn-O Films Grown by Atomic Layer Deposition
Author(s)
김수현이도중[이도중]권장연[권장연]김지연[김지연]김기주[김기주]조영호[조영호]조성용[조성용]Jummy Xu[Jummy Xu]김기범[김기범]
Keywords
OXIDE THIN-FILMS; TRANSPARENT CONDUCTING OXIDES; LIGHT-EMITTING-DIODES; ZINC-OXIDE; INDIUM OXIDE; SOLAR-CELLS; CARRIER TRANSPORT; TRANSISTORS; IN2O3; WATER
Issue Date
201401
Publisher
AMER CHEMICAL SOC
Citation
JOURNAL OF PHYSICAL CHEMISTRY C, v.118, no.1, pp.408 - 415
Abstract
Ultrasmooth and highly conductive amorphous In-Zn-O (a-IZO) films are grown by atomic layer deposition (ALD). This opens a new pathway to highly transparent and conductive oxides with an extreme conformality. In this process, a-IZO films of various compositions are deposited by alternate stacking of ZnO and In2O3 atomic-layers at a temperature of 200 degrees C. The IZO films have an amorphous phase over a wide composition range, 43.2-91.5 at %, of In cation ratio. The In-rich a-IZO film (83.2 at % In) exhibits a very low resistivity of 3.9 x 10(-4) Omega cm and extremely high electron mobility in excess of 50 cm(2) V-1 s(-1), one of the highest among the reported ALD-grown transparent conducting oxides. Moreover, it exhibits an ultrasmooth surface (similar to 0.2 nm in root-mean-square roughness), and can be conformally coated onto nanotrench structures (inlet size: 25 nm) with excellent step coverage of 96%.
URI
http://hdl.handle.net/YU.REPOSITORY/33583http://dx.doi.org/10.1021/jp409738f
ISSN
1932-7447
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공과대학 > 신소재공학부 > Articles
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