Investigation of Internal Electric Fields in GaAs Solar Cell under Highly-concentrated Light

Title
Investigation of Internal Electric Fields in GaAs Solar Cell under Highly-concentrated Light
Author(s)
김종수이승준조현준소모근손창원한임식배인호이상준[이상준]노삼규[노삼규]최현광[최현광]임재영[임재영]
Keywords
FRANZ-KELDYSH OSCILLATIONS; SCHOTTKY-BARRIER FORMATION; PHOTOREFLECTANCE; TEMPERATURE; SPECTROSCOPY
Issue Date
201502
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.66, no.4, pp.667 - 671
Abstract
The temperature and the excitation-intensity dependences of the junction electric fields in the GaAs p-i-n solar cell structure have been investigated by using photoreflectance (PR) spectroscopy. In the p-i-n solar cell structure, two different electric fields are observed. The fast Fourier transform (FFT) analysis implies that the two electric fields can be assigned to the p-i and the i-n interfaces. The strengths of the electric fields at the p-i and the i-n interfaces are 38 and 44 kV/cm, respectively. The electric fields gradually increase due to the temperature-dependent photovoltage effect with increasing sample temperature. With increasing excitation intensity, the electric field at the p-i interface gradually decreases due to the photovoltage effect caused by carrier screening while that at the i-n interface is insensitive to the light's intensity. This abnormal behavior can be explained by the anisotropy carrier dynamics at the p-i and the i-n interfaces., The relation between the open-circuit voltage (Voc) and the ideality factor in concentration photovoltaic (CPV) devices is discussed.
URI
http://hdl.handle.net/YU.REPOSITORY/33580http://dx.doi.org/10.3938/jkps.66.667
ISSN
0374-4884
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이과대학 > 물리학과 > Articles
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