Origin of performance loss in post-deposition Na-treated Cu(In,Ga)Se-2 solar cell

Title
Origin of performance loss in post-deposition Na-treated Cu(In,Ga)Se-2 solar cell
Author(s)
전찬욱김우남박상욱
Keywords
GROWTH; SODIUM; INDIUM
Issue Date
201401
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.550, pp.587 - 590
Abstract
The post-deposition Na-treated Cu(In,Ga)Se-2 photovoltaic absorber layer after film growth was experimentally compared with the conventional Cu(In,Ga)Se-2 grown under Na environment. The post-deposited Na was found to function in a similar way to the conventional Na, which greatly increased hole concentration of the absorber. However, the post-deposition treatment deteriorated the double-graded bandgap profile and induced a lattice contraction of the Cu(In,Ga)Se-2 grown under Na-free condition, which may be responsible for the inferior open-circuit voltage and fill factor compared to the conventional Cu(In,Ga)Se-2 absorber grown on sodalime glass substrate. (C) 2013 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/33578http://dx.doi.org/10.1016/j.tsf.2013.11.084
ISSN
0040-6090
Appears in Collections:
공과대학 > 화학공학부 > Articles
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