Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier

Title
Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier
Author(s)
안광순I. Jyothi[I. Jyothi]V. Janardhanam[V. Janardhanam]임이랑[임이랑]V. Rajagopal Reddy[V. Rajagopal Reddy]최철종[최철종]
Keywords
CURRENT-VOLTAGE CHARACTERISTICS; STATE DENSITY DISTRIBUTION; ORGANIC INTERLAYER; BARRIER HEIGHTS; DIODES; CONTACT; PARAMETERS; TRANSPORT; DEVICES; SPECTROSCOPY
Issue Date
201502
Publisher
ELSEVIER SCI LTD
Citation
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.30, pp.420 - 428
Abstract
Electrical properties of Au/n-GaN Schottky rectifier with copper pthalocyanine (CuPc) interlayer were investigated using current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics. The barrier height obtained for the Au/CuPc/n-GaN Schottky diode was higher than that of the Au/n-GaN Schottky diode. This could be associated with the presence of the CuPc interlayer influencing the space-charge region of the Au/n-GaN structure. The Au/CuPc/n-GaN Schottky structure exhibits higher ideality factor, indicating the higher interface inhomogeneity in Au/CuPc/n-GaN as compared to Au/n-GaN Schottky structure. The density of interface states was extracted using I-V, C-V, and G-V characteristics. The results showed that the introduction of CuPc interlayer facilitated the reduction of interface state density (N-ss) of Au Schottky contact to n-GaN. Particularly, the Nss obtained from frequency-dependent C-V characteristics was lower than that determined from forward I-V characteristics, which could be attributed to the inhomogeneous distribution of N-ss at Schottky interface. (C) 2014 Elsevier Ltd. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/33569http://dx.doi.org/10.1016/j.mssp.2014.10.047
ISSN
1369-8001
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공과대학 > 화학공학부 > Articles
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