Optimization of nanocomposite gate insulators for organic thin film transistors
- Optimization of nanocomposite gate insulators for organic thin film transistors
- 임수만; 이근형[이근형]; 김혜경; 김세현
- FIELD-EFFECT TRANSISTORS; PERFORMANCE; PENTACENE; POLYMER; CIRCUITS; DIELECTRICS; MORPHOLOGY
- Issue Date
- ELSEVIER SCIENCE BV
- ORGANIC ELECTRONICS, v.17, pp.144 - 150
- Nanocomposite gate insulators consisting of (Ba, Sr)TiO3 (barium strontium titanate; BST) nanoparticles and crosslinked poly(4-vinyl phenol) (PVP) polymers were fabricated. Well-dispersed nanocomposite films were prepared by optimizing the BST nanoparticle size sorting process (ultrasound crushing and centrifuge method). The size-sorted BST nanoparticles (similar to 30 nm in size) were homogeneously mixed in the PVP host polymer in various BST contents, from 0 to 70 wt%, to tune the dielectric constant (kappa) of the resulting nanocomposite films. The composite films exhibit three-fold increase in the kappa value from 3.9 to 11.3. The physical properties including leakage current and surface roughness of the composites were also measured as a function of the BST loading content and particle dispersion. The relationship between these properties and the electrical performance of the corresponding organic thin film transistor were explored. (C) 2014 Elsevier B.V. All rights reserved.
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