Optimization of nanocomposite gate insulators for organic thin film transistors

Title
Optimization of nanocomposite gate insulators for organic thin film transistors
Author(s)
임수만이근형[이근형]김혜경김세현
Keywords
FIELD-EFFECT TRANSISTORS; PERFORMANCE; PENTACENE; POLYMER; CIRCUITS; DIELECTRICS; MORPHOLOGY
Issue Date
201502
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v.17, pp.144 - 150
Abstract
Nanocomposite gate insulators consisting of (Ba, Sr)TiO3 (barium strontium titanate; BST) nanoparticles and crosslinked poly(4-vinyl phenol) (PVP) polymers were fabricated. Well-dispersed nanocomposite films were prepared by optimizing the BST nanoparticle size sorting process (ultrasound crushing and centrifuge method). The size-sorted BST nanoparticles (similar to 30 nm in size) were homogeneously mixed in the PVP host polymer in various BST contents, from 0 to 70 wt%, to tune the dielectric constant (kappa) of the resulting nanocomposite films. The composite films exhibit three-fold increase in the kappa value from 3.9 to 11.3. The physical properties including leakage current and surface roughness of the composites were also measured as a function of the BST loading content and particle dispersion. The relationship between these properties and the electrical performance of the corresponding organic thin film transistor were explored. (C) 2014 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/33516http://dx.doi.org/10.1016/j.orgel.2014.11.026
ISSN
1566-1199
Appears in Collections:
중앙도서관 > rims journal
공과대학 > 신소재공학부 > Articles
공과대학 > 화학공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE