Critical Factors to Achieve Low Voltage- and Capacitance-Based Organic Field-Effect Transistors

Title
Critical Factors to Achieve Low Voltage- and Capacitance-Based Organic Field-Effect Transistors
Author(s)
김세현장미[장미]박지훈[박지훈]임성일[임성일]양회창[양회창]
Keywords
THIN-FILM TRANSISTORS; GATE-DIELECTRICS; PENTACENE; INSULATORS; STATES
Issue Date
201401
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.26, no.2, pp.288 - 292
Abstract
Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm(-2)), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to mu m-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (mu(FET) approximate to 1.3 cm(2)V(-1)s(-1), Vth approximate to 0.5 V, SS approximate to 0.2 V), as well as excellent device reliability.
URI
http://hdl.handle.net/YU.REPOSITORY/33512http://dx.doi.org/10.1002/adma.201303388
ISSN
0935-9648
Appears in Collections:
공과대학 > 화학공학부 > Articles
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