Effects of in-situ molecular oxygen exposure on the modulation of electrical properties of zinc oxide thin films grown by atomic layer deposition

Title
Effects of in-situ molecular oxygen exposure on the modulation of electrical properties of zinc oxide thin films grown by atomic layer deposition
Author(s)
신재철박희경[박희경]양봉섭[양봉섭]김명상[김명상]박상현[박상현]한정환[한정환]허재영[허재영]
Keywords
ROOM-TEMPERATURE; ZNO FILMS; SPRAY-PYROLYSIS; TIN-OXIDE; TRANSPARENT; TRANSISTORS; PHOTOLUMINESCENCE; FABRICATION; INTERFACE; EMISSION
Issue Date
201502
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.212, no.2, pp.323 - 328
Abstract
The possibility of employing molecular oxygen (O-2) for reducing the carrier concentration of zinc oxide (ZnO) thin films grown by atomic layer deposition was investigated. The exposure of O-2 after the oxygen-source pulse (deionised water) was eventually highly effective for decreasing the carrier concentration over 3-4 orders of magnitude. In contrast, the O-2 pulse, when following the zinc source pulse (diethylzinc), had a minimal effect on the electrical property. Detailed structural, chemical and electrical analyses of the oxygen-modulated ZnO thin films were conducted. Successful electrical modulation of the ZnO thin films was further demonstrated by fabricating back-gated thin film transistors. The improvement in the on-to-off current ratio of the transistors was achieved by the proper exposure of O-2.
URI
http://hdl.handle.net/YU.REPOSITORY/33481http://dx.doi.org/10.1002/pssa.201431390
ISSN
1862-6300
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이과대학 > 물리학과 > Articles
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