Dielectric surface-polarity tuning and enhanced operation stability of solution-processed organic field-effect transistors

Title
Dielectric surface-polarity tuning and enhanced operation stability of solution-processed organic field-effect transistors
Author(s)
김지예[김지예]장미[장미]안태규[안태규]김성철김혜경김세현양회창[양회창]박찬언[박찬언]
Keywords
THIN-FILM TRANSISTORS; GATE-DIELECTRICS; PENTACENE; TRANSPORT; SEMICONDUCTORS; PERFORMANCE; INSULATORS; DENSITY; CHANNEL; FACILE
Issue Date
201502
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v.17, pp.87 - 93
Abstract
The electrical performance of triethylsilylethynyl anthradithiophene (TES-ADT) organic field-effect transistors (OFETs) was significantly affected by dielectric surface polarity controlled by grafting hexamethyldisilazane and dimethyl chlorosilane-terminated polystyrene (PS-Si(CH3)(2)Cl) to 300-nm-thick SiO2 dielectrics. On the untreated and treated SiO2 dielectrics, solvent-vapor annealed TES-ADT films contained millimeter-sized crystals with low grain boundaries (GBs). The operation and bias stability of OFETs containing similar crystalline structures of TES-ADT could be significantly increased with a decrease in dielectric surface polarity. Among dielectrics with similar capacitances (10.5-11 nF cm(-2)) and surface roughnesses (0.40-0.44 nm), the TES-ADT/PS-grafted dielectric interface contained the fewest trap sites and therefore the OFET produced using it had low-voltage operation and a charge-carrier mobility similar to 1.32 cm(2) V (-1) s (-1), on-off current ratio > 10(6), threshold voltage similar to 0 V, and long-term operation stability under negative bias stress. (C) 2014 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/33441http://dx.doi.org/10.1016/j.orgel.2014.11.022
ISSN
1566-1199
Appears in Collections:
공과대학 > 화학공학부 > Articles
공과대학 > 신소재공학부 > Articles
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