Highly reflective Ti/Ag/Pt contacts to p-GaN for high-efficiency GaN-based light-emitting diodes

Title
Highly reflective Ti/Ag/Pt contacts to p-GaN for high-efficiency GaN-based light-emitting diodes
Author(s)
안광순오문식[오문식]정성훈[정성훈]길영운[길영운]김현수[김현수]
Keywords
LOW-RESISTANCE; OHMIC CONTACT; AG; ALLOY
Issue Date
201502
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.2
Abstract
The authors report highly efficient GaN-based light-emitting diodes (LEDs) fabricated with Ti/Ag/Pt reflective p-type contact. Compared with the reference Ni/Ag/Pt contact, Ti/Ag/Pt contact annealed at optimized thermal annealing condition produced low specific contact resistances of 5.7 x 10(-4)Omega cm(2), and good optical reflectivity of 88.4% at 450 nm. This is due to the generated interfacial Ti-O layer upon thermal annealing in N-2 ambient, which suppress the excessive inter-diffusion between Ag and GaN layers. Consequently, the LEDs fabricated with Ti/Ag/Pt contacts showed 32.6% brighter light output power and nearly the same forward voltages as compared to the reference LEDs fabricated with Ni/Ag/Pt contacts. 2015 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/33428http://dx.doi.org/10.7567/JJAP.54.02BB01
ISSN
0021-4922
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공과대학 > 화학공학부 > Articles
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