Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

Title
Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing
Author(s)
김세현정용진[정용진]윤동진[윤동진]장재영[장재영]박선욱[박선욱]안태규[안태규]김래호[김래호]박찬언[박찬언]
Keywords
SELF-ASSEMBLED MONOLAYERS; SEMICONDUCTOR THIN-FILMS; ORGANIC SEMICONDUCTOR; INTERFACE; TRANSPORT; MOLECULE; MOBILITY; C-60; INJECTION; ENERGY
Issue Date
201503
Publisher
ROYAL SOC CHEMISTRY
Citation
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.17, no.9, pp.6635 - 6643
Abstract
Solution-processed organic field effect transistors (OFETs), which are amenable to facile large-area processing methods, have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices. The low performance levels of n-type solution-processed bottom-contact OFETs unfortunately continue to pose a barrier to their commercialization. In this study, we introduced a combination of CVD-grown graphene source/drain (S/D) electrodes and fullerene (C-60) in a solution-processable n-type semiconductor toward the fabrication of n-type bottom-contact OFETs. The C-60 coating in the channel region was achieved by modifying the surface of the oxide gate dielectric layer with a phenyl group-terminated self-assembled monolayer (SAM). The graphene and phenyl group in the SAMs induced pi-pi interactions with C-60, which facilitated the formation of a C-60 coating. We also investigated the effects of thermal annealing on the reorganization properties and field-effect performances of the overlaying solution-processed C-60 semiconductors. We found that thermal annealing of the C-60 layer on the graphene surface improved the crystallinity of the face-centered cubic (fcc) phase structure, which improved the OFET performance and yielded mobilities of 0.055 cm(2) V-1 s(-1). This approach enables the realization of solution-processed C-60-based FETs using CVD-grown graphene S/D electrodes via inexpensive and solution-process techniques.
URI
http://hdl.handle.net/YU.REPOSITORY/33191http://dx.doi.org/10.1039/c4cp05787b
ISSN
1463-9076
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공과대학 > 화학공학부 > Articles
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