Fabrication of Transferable Al2O3 Nanosheet by Atomic Layer Deposition for Graphene FET

Title
Fabrication of Transferable Al2O3 Nanosheet by Atomic Layer Deposition for Graphene FET
Author(s)
김수현정한얼[정한얼]박주상[박주상]오일권[오일권]최태진[최태진]이상은[이상은]홍주리[홍주리]이태윤[이태윤]김형준[김형준]
Keywords
FIELD-EFFECT TRANSISTORS; WALLED CARBON NANOTUBES; CURRENT SATURATION; FILMS; DIELECTRICS; MOBILITY
Issue Date
201402
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.6, no.4, pp.2764 - 2769
Abstract
Without introducing defects in the monolayer of carbon lattice, the deposition of high-kappa dielectric material is a significant challenge because of the difficulty of high-quality oxide nucleation on graphene. Previous investigations of the deposition of high-kappa dielectrics on graphene have often reported significant degradation of the electrical properties of graphene. In this study, we report a new way to integrate high-kappa dielectrics with graphene by transferring a high-kappa dielectric nanosheet onto graphene. Al2O3 film was deposited on a sacrificial layer using an atomic layer deposition process and the Al2O3 nanosheet was fabricated by removing the sacrificial layer. Top-gated graphene field-effect transistors were fabricated and characterized using the Al2O3 nanosheet as a gate dielectric. The top-gated graphene was demonstrated to have a field-effect mobility up to 2200 cm(2)/(V s). This method provides a new method for high-performance graphene devices with broad potential impacts reaching from high-frequency high-speed circuits to flexible electronics.
URI
http://hdl.handle.net/YU.REPOSITORY/33140http://dx.doi.org/10.1021/am4052987
ISSN
1944-8244
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공과대학 > 신소재공학부 > Articles
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