A low temperature process for phosphorous doped ZnO nanorods via a combination of hydrothermal and spin-on dopant methods

Title
A low temperature process for phosphorous doped ZnO nanorods via a combination of hydrothermal and spin-on dopant methods
Author(s)
박일규손정인[손정인]정용일백성호[백성호]차승남[차승남]장재은[장재은]김재현[김재현]김종민[김종민]조장희[조장희]
Keywords
P-TYPE ZNO; NANOWIRE ARRAYS; THIN-FILMS; PHOTOLUMINESCENCE; ENERGY
Issue Date
201402
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.6, no.4, pp.2046 - 2051
Abstract
We demonstrate the fabrication of solution based low temperature-processed p-type ZnO NRs doped with phosphorous by using a spin-on- dopant method coupled with a hydrothermal process. We confirmed the incorporation of phosphorous dopants into a ZnO crystal by analyzing SIMS profiles, together with the evolution of the photoluminescence spectra. It is further revealed that the electrical properties of the p-type ZnO/n-type Si heterojunction diode exhibited good rectifying behavior, confirming that p-type ZnO NRs were successfully formed. In addition, we demonstrate that a piezoelectric nanogenerator with p-type ZnO NRs made on a glass substrate shows large enough power to drive polymer dispersed liquid crystal displays.
URI
http://hdl.handle.net/YU.REPOSITORY/33126http://dx.doi.org/10.1039/c3nr05128e
ISSN
2040-3364
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공과대학 > 전자공학과 > Articles
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