Full metadata record

DC FieldValueLanguage
dc.contributor.author김종수ko
dc.contributor.authorEun-Hye Lee[Eun-Hye Lee]ko
dc.contributor.author송진동[송진동]ko
dc.contributor.author한일기[한일기]ko
dc.contributor.authorSoo-Kyung Chang[Soo-Kyung Chang]ko
dc.contributor.authorFabian Langer[Fabian Langer]ko
dc.contributor.authorSven H?fling[Sven H?fling]ko
dc.contributor.authorAlfred Forchel[Alfred Forchel]ko
dc.contributor.authorMartin Kamp[Martin Kamp]ko
dc.date.accessioned2015-12-17T04:58:51Z-
dc.date.available2015-12-17T04:58:51Z-
dc.date.created2015-11-13-
dc.date.issued201503-
dc.identifier.citationNANOSCALE RESEARCH LETTERS, v.10-
dc.identifier.issn1556-276X-
dc.identifier.urihttp://hdl.handle.net/YU.REPOSITORY/33062-
dc.identifier.urihttp://dx.doi.org/10.1186/s11671-015-0826-2-
dc.description.abstractThe position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/mu m(2)), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.-
dc.language영어-
dc.publisherSPRINGER-
dc.titleStructural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling-
dc.typeArticle-
dc.identifier.wosid000351222800001-
dc.identifier.scopusid2-s2.0-84924873292-
Appears in Collections:
이과대학 > 물리학과 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE