Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Title
Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling
Author(s)
김종수Eun-Hye Lee[Eun-Hye Lee]송진동[송진동]한일기[한일기]Soo-Kyung Chang[Soo-Kyung Chang]Fabian Langer[Fabian Langer]Sven H?fling[Sven H?fling]Alfred Forchel[Alfred Forchel]Martin Kamp[Martin Kamp]
Issue Date
201503
Publisher
SPRINGER
Citation
NANOSCALE RESEARCH LETTERS, v.10
Abstract
The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/mu m(2)), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
URI
http://hdl.handle.net/YU.REPOSITORY/33062http://dx.doi.org/10.1186/s11671-015-0826-2
ISSN
1556-276X
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이과대학 > 물리학과 > Articles
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