Optical and electrical properties of InAs/GaAs quantum-dot solar cells

Title
Optical and electrical properties of InAs/GaAs quantum-dot solar cells
Author(s)
김종수리얀패트릭스미스한임식Noh, Sam Kyu[Noh, Sam Kyu]Leem, Jae-Young[Leem, Jae-Young]
Keywords
GAAS; GROWTH; INAS
Issue Date
201403
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.6, pp.895 - 899
Abstract
We investigated the optical and the electrical properties of InAs quantum-dot solar cells (QDSCs) with various InAs deposition thicknesses (theta) via photoluminescence (PL), spectral response (SR), and current density-voltage (J-V) measurements. We fabricated three QDSCs with thicknesses of 2.0, 2.5, and 3.0 monolayers (MLs). Our measurements revealed the effects of the QD size on the spectral response, the conversion efficiency (eta) and the device parameters. The QDSCs had a maximum eta of 17% for theta = 2.0 ML under AM1.5G conditions. The change of device parameters in various QDSCs could be explained by the effects of the balance between enhanced carrier production from the QD layers and carrier trapping/re-capturing by strain-induced defect/QD states.
URI
http://hdl.handle.net/YU.REPOSITORY/32954http://dx.doi.org/10.3938/jkps.64.895
ISSN
0374-4884
Appears in Collections:
이과대학 > 물리학과 > Articles
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