Electrical Characteristics of TMAH-Surface Treated Ni/Au/Al2O3/GaN MIS Schottky Structures

Title
Electrical Characteristics of TMAH-Surface Treated Ni/Au/Al2O3/GaN MIS Schottky Structures
Author(s)
장자순이정희[이정희]시바프래탑래디
Keywords
INTERFACE STATES; GAN SURFACES; DIODES; SILICON; TRANSPORT; PERFORMANCE; PARAMETERS; DEVICES; SYSTEM
Issue Date
201403
Publisher
KOREAN INST METALS MATERIALS
Citation
ELECTRONIC MATERIALS LETTERS, v.10, no.2, pp.411 - 416
Abstract
The electrical characteristics and reverse leakage mechanisms of tetramethylammonium hydroxide (TMAH) surface-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes were investigated by using the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The ME diode was formed on n-GaN after etching the AlGaN in the AlGaN/GaN heterostructures. The TMAH-treated MIS diode showed better Schottky characteristics with a lower ideality factor, higher barrier height and lower reverse leakage current compared to the TMAH-free MIS diode. In addition, the TMAH-free MIS diodes exhibited a transition from Poole-Frenkel emission at low voltages to Schottky emission at high voltages, whereas the TMAH-treated MIS diodes showed Schottky emission over the entire voltage range. Reasonable mechanisms for the improved device-performance characteristics in the TMAH-treated MIS diode are discussed in terms of the decreased interface state density or traps associated with an oxide material and the reduced tunneling probability.
URI
http://hdl.handle.net/YU.REPOSITORY/32947http://dx.doi.org/10.1007/s13391-014-3356-7
ISSN
1738-8090
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공과대학 > 전자공학과 > Articles
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