Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition

Title
Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition
Author(s)
김수현김우희[김우희]김민규[김민규]오일권[오일권]맹완주[맹완주]천태훈Atif Noori[Atif Noori]David Thompson[David Thompson]Schubert Chu[Schubert Chu]김형준[김형준]
Keywords
THIN-FILMS; CERIUM OXIDE; GATE OXIDES; DOPED HFO2; SPECTROSCOPY; METAL
Issue Date
201404
Publisher
WILEY-BLACKWELL
Citation
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.97, no.4, pp.1164 - 1169
Abstract
Films of CeO2 were deposited by atomic layer deposition (ALD) using a Ce(mmp)(4) [mmp=1-methoxy-2-methyl-2-propanolate] precursor and H2O reactant. The growth characteristics and film properties of ALD CeO2 were investigated. The ALD CeO2 process produced highly pure, stoichiometric films with polycrystalline cubic phases. Using the ALD CeO2 process, the effects of Ce doping into an HfO2 gate dielectric were systematically investigated. Regardless of Ce/(Ce+Hf) composition, all ALD CexHf1-xO2 films exhibited constant growth rates of approximately 1.3 angstrom/cycle, which is essentially identical to the ALD HfO2 growth rates. After high-temperature vacuum annealing at 900 degrees C, it was verified, based on X-ray diffraction and high-resolution cross-sectional transmission electron microscopy results, that all samples with various Ce/(Ce+Hf) compositions were transformed from nanocrystalline to stabilized cubic or tetragonal HfO2 phases. In addition, the dielectric constant of the CexHf1-xO2 films significantly increased, depending on the Ce doping content. The maximum dielectric constant value was found to be nearly 39 for the Ce/(Ce+Hf) concentration of similar to 11%.
URI
http://hdl.handle.net/YU.REPOSITORY/32606http://dx.doi.org/10.1111/jace.12762
ISSN
0002-7820
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공과대학 > 신소재공학부 > Articles
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