ZnO homojunction core-shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition

Title
ZnO homojunction core-shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition
Author(s)
김수현고경용[고경용]강혜민[강혜민]박주상[박주상]민병욱[민병욱]이희성[이희성]임성일[임성일]강지연[강지연]명재민[명재민]정재훈김형준[김형준]
Keywords
GROWTH; PHOTOLUMINESCENCE; FABRICATION; FILMS
Issue Date
201404
Publisher
ELSEVIER SCIENCE SA
Citation
SENSORS AND ACTUATORS A-PHYSICAL, v.210, pp.197 - 204
Abstract
We investigated the device properties of ZnO homojunction core-shell nanorods (NRs) ultraviolet (UV) photo-detecting diodes depending on fabrication process. ZnO homojunction core-shell NRs fabrication was realized by atomic layer deposition (ALD) of highly conformal ZnO shell with high concentration of nitrogen (HNZO) over hydrothermally synthesized n-ZnO NRs. ALD of HNZO was carried out using diethyl zinc (DEZ) and diluted ammonium hydroxide (NH4OH) as a Zn precursor and reactant/nitrogen source, respectively. On the electrical analysis, HNZO films is found to be weak n-type or ambiguous and, finally this HNZO attributed the rectifying property at the junction with n-type ZnO NRs. ZnO planar device was also fabricated as a comparative reference. Comparative study between core-shell and planar device has shown that the responsivity of the core-shell device was turned out to be about two times higher than that of planar device. Photoluminescence (PL) intensity of core-shell device was significantly reduced compared to that of planar device for overall region of wavelength, which was attributed to rapid separation of photo-generated carriers. The carrier transport mechanism in core-shell NR device is discussed based on band bending phenomenon. (C) 2014 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/32604http://dx.doi.org/10.1016/j.sna.2014.02.005
ISSN
0924-4247
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공과대학 > 신소재공학부 > Articles
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