Non-Lithographic Growth of Core-Shell GaAs Nanowires on Si for Optoelectronic Applications

Title
Non-Lithographic Growth of Core-Shell GaAs Nanowires on Si for Optoelectronic Applications
Author(s)
신재철배명호[배명호]김범규[김범규]하동한[하동한]이상준[이상준]Sharma, Rahul[Sharma, Rahul]최경진[최경진]김주진[김주진]최원준[최원준]
Keywords
SILICON NANOWIRES; PERFORMANCE; PHOTONICS; EPITAXY; ELECTRONICS; ARRAYS
Issue Date
201404
Publisher
AMER CHEMICAL SOC
Citation
CRYSTAL GROWTH & DESIGN, v.14, no.4, pp.1510 - 1515
Abstract
We demonstrated a nonlithographic method for integrating GaAs nanowire (NW) array-based light-emitting diodes (LEDs) on silicon (Si) substrates. A sub-100 nm hole array on a deposited SiO2 layer was patterned on an entire 2 in. Si wafer based on a sacrificed self-assembled InAs NW array. Then, a core shell n-p junction GaAs NW array was grown on exposed Si windows via the selective-area growth method. The electrical properties of the core shell n-p junction GaAs NW has been measured and compared to those of the core shell junction NWs formed via the self-assembled growth method. Room temperature electroluminescence was successfully observed from the fabricated GaAs NW array-based LEDs. The core-shell junction III-V NW array epitaxially grown on a ubiquitous Si platform could be applied to future low-cost optical devices.
URI
http://hdl.handle.net/YU.REPOSITORY/32533http://dx.doi.org/10.1021/cg401520q
ISSN
1528-7483
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이과대학 > 물리학과 > Articles
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