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dc.contributor.author박진호ko
dc.contributor.author바수데바레디ko
dc.contributor.author게디스리데비ko
dc.contributor.authorMiles R.W[Miles R.W]ko
dc.contributor.authorRamakrishna Reddy K.T[Ramakrishna Reddy K.T]ko
dc.date.accessioned2015-12-17T04:51:25Z-
dc.date.available2015-12-17T04:51:25Z-
dc.date.created2015-11-13-
dc.date.issued201505-
dc.identifier.citationCURRENT APPLIED PHYSICS, v.15, no.5, pp.588 - 598-
dc.identifier.issn1567-1739-
dc.identifier.urihttp://hdl.handle.net/YU.REPOSITORY/32478-
dc.identifier.urihttp://dx.doi.org/10.1016/j.cap.2015.01.022-
dc.description.abstractThin films of tin sulphide (SnS) have been grown by sulphurization of sputtered tin precursor layers in a closed chamber. The effect of sulphurization temperature (T-s) that varied in the range of 150-450 degrees C for a fixed sulphurization time of 120 min on SnS film was studied through various characterization techniques. X-ray photoelectron spectroscopy analysis demonstrated the transformation of metallic tin layers into SnS single phase for T-s between 300 degrees C and 350 degrees C. The X-ray diffraction measurements indicated that all the grown films had the (111) crystal plane as the preferred orientation and exhibited orthorhombic crystal structure. Raman analysis showed modes at 95 cm(-1), 189 cm(-1) and 218 cm(-1) are related to the A(g) mode of SnS. AFM images revealed a granular change in the grain growth with the increase of T-s. The optical energy band gap values were estimated using the transmittance spectra and found to be varied from 1.2 eV to 1.6 eV with T-s. The Hall effect measurements showed that all the films were p-type conducting nature and the layers grown at 350 degrees C showed a low electrical resistivity of 64 Omega-cm, a net carrier concentration of 2 x 10(16) cm(-3) and mobility of 41 cm(2) V-1 s(-1). With the use of sprayed Zn0.76Mg0.24O as a buffer layer and the sputtered ZnO:Al as window layer, the SnS based thin film solar cell was developed that showed a conversion efficiency of 2.02%. (C) 2015 Elsevier B.V. All rights reserved.-
dc.language영어-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectTIN SULFIDES SNS-
dc.subjectP-TYPE SNS-
dc.subjectELECTRONIC-STRUCTURE-
dc.subjectPHOTOVOLTAIC CELLS-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectNUMERICAL-ANALYSIS-
dc.subjectHETEROJUNCTION-
dc.subjectSULFUR-
dc.subjectSN2S3-
dc.titleDevelopment of sulphurized SnS thin film solar cells-
dc.typeArticle-
dc.identifier.wosid000352280000006-
dc.identifier.scopusid2-s2.0-84923241381-
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