Design of an LED chip structure with an integrated two-dimensional photonic crystal to enhance the light-extraction efficiency

Title
Design of an LED chip structure with an integrated two-dimensional photonic crystal to enhance the light-extraction efficiency
Author(s)
박시현최원식
Keywords
PATTERNED N-GAN; EMITTING-DIODES; SPONTANEOUS EMISSION; FDTD SIMULATION; INCREASE
Issue Date
201405
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.10, pp.1425 - 1429
Abstract
We numerically simulated the light-extraction efficiency of light-emitting diodes (LEDs) with an integrated two-dimensional photonic crystal (PC) structure on the top surface in order to enhance light extraction. We considered InGaN-based LED chips with a typical emission wavelength of lambda(o) = 460 nm and an emission wavelength inside the LED chip of lambda = lambda(o)/nGaN, where nGaN is the refractive index of G(a)N. We used positive (relief) and negative (intaglio) patterns for the PC structures with square arrangements. The pattern period (I >), width (d), and height (h) of the PC structure were varied systematically in the PC-LEDs; then the light-extraction efficiency of each PC-LED was simulated numerically using a three-dimensional finite-difference time-domain method to optimize the PC structure in terms of light extraction. The PC LED with a square pilla pattern with I > a parts per thousand integral 1.4 lambda, d a parts per thousand integral 0.75I >, and h a parts per thousand integral 0.75I > had the maximum light-extraction efficiency for positive patterns while the cylindrical hole pattern with I > a parts per thousand integral 1.2 lambda, d a parts per thousand integral 0.5I >, and h a parts per thousand integral 0.5I > had the maximum light-extraction efficiency for negative patterns.
URI
http://hdl.handle.net/YU.REPOSITORY/32345http://dx.doi.org/10.3938/jkps.64.1425
ISSN
0374-4884
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공과대학 > 전자공학과 > Articles
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