Rapid synthesis of CuInSe2 from sputter-deposited bilayer In2Se3/Cu2Se precursors

Title
Rapid synthesis of CuInSe2 from sputter-deposited bilayer In2Se3/Cu2Se precursors
Author(s)
김우경구자석김재웅[김재웅]정채환[정채환]
Keywords
CU-SE SYSTEM; SOLAR-CELLS; GROWTH; FILMS
Issue Date
201505
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.582, pp.79 - 84
Abstract
Binary bilayer glass/Mo/In2Se3/Cu2Se precursors have been used to rapidly form CuInSe2. Considering their possible application to large-area deposition processes, bilayer precursors were deposited by sequential radiofrequency sputtering of In2Se3 and direct current sputtering of Cu2Se onto unheated, Mo-coated glass substrates. High-temperature X-ray diffraction analysis of the glass/Mo/Cu2Se sample confirmed that the as-deposited polycrystalline Cu2-xSe phase is likely transformed to CuSe at approximately 210 degrees C, and then to CuSe2 at 260 degrees C. Further increase in temperature resulted in the peritectic decomposition of CuSe2 to CuSe (+ liquid) at approximately 330 degrees C, and then to Cu2-xSe (+ liquid) at around 380 degrees C with the release of Se. Pre-annealing of In2Se3/Cu2Se precursors in Se environment resulted in the formation of a liquid phase, which is in equilibrium with CuSe. Rapid, thermal annealing of pre-annealed samples between 500 and 550 degrees C apparently enhanced grain growth and reduced the reaction time to about 3 min; this can be explained by a liquid phase-assisted grain growth mechanism. (C) 2014 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/32311http://dx.doi.org/10.1016/j.tsf.2014.08.047
ISSN
0040-6090
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공과대학 > 화학공학부 > Articles
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