Nitrogen-doped ZnO/n-Si core-shell nanowire photodiode prepared by atomic layer deposition

Title
Nitrogen-doped ZnO/n-Si core-shell nanowire photodiode prepared by atomic layer deposition
Author(s)
김수현고경용[고경용]강혜민[강혜민]이원선[이원선]이창완[이창완]박주상[박주상]이희성[이희성]임성일[임성일]김한길민병욱[민병욱]김형준[김형준]
Keywords
SOLAR-CELLS; THIN-FILM; SILICON; PHOTODETECTORS; DEVICES; ARRAY
Issue Date
201505
Publisher
ELSEVIER SCI LTD
Citation
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.33, pp.154 - 160
Abstract
Photodiodes made from core-shell nanowires (NWs) comprising n-type silicon (n-Si; core) and nitrogen-doped ZnO (ZnO:N; shell) were fabricated by atomic layer deposition of ZnO:N on vertically aligned Si Wis. The device properties were investigated as functions of nitrogen content of the ZnO:N shell. The electron-carrier concentration of ZnO:N was modulated by adjusting the concentration of the reactant, diluted ammonium hydroxide, from 0 to 30%. The rectification ratio and the reverse-current density of the ZnO:Nin-Si planar heterojunction were evaluated under dark condition for various NH4OH concentrations. The ZnO:N/n-Si heterojunction prepared with NH4OH 15% was found to have the lowest reverse-current density with a moderate resistivity. In order to realize an effective ZnO:N/n-Si photodiode, a ZnO:N layer prepared with 15% NH4OH was deposited on well-aligned Si nanowires. The core-shell NW photodiode showed more sensitive photodetecting performance in UV light than the planar photodiode. Also, the significantly enhanced performances of the core-shell NW photodiode were evaluated by examining its spectral responsivity. (C) 2015 Elsevier Ltd. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/32269http://dx.doi.org/10.1016/j.mssp.2015.02.004
ISSN
1369-8001
Appears in Collections:
공과대학 > 신소재공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE