Al2O3/TiO2 Nano laminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition

Title
Al2O3/TiO2 Nano laminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
Author(s)
김혜경김세현Lae Ho Kim[Lae Ho Kim]박찬언[박찬언]Kyunghun Kim[Kyunghun Kim]Seonuk Park[Seonuk Park]YJ Jeong[YJ Jeong]DS Chung[DS Chung]
Keywords
FIELD-EFFECT TRANSISTORS; LIGHT-EMITTING-DIODES; GAS-DIFFUSION BARRIERS; LOW-VOLTAGE; STABILITY; PASSIVATION; ELECTRONICS; DIELECTRICS; DEVICES; CELLS
Issue Date
201405
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.6, no.9, pp.6731 - 6738
Abstract
Organic electronic devices require a passivation layer that protects the active layers from moisture and oxygen because most organic materials are very sensitive to such gases. Passivation films for the encapsulation of organic electronic devices need excellent stability and mechanical properties. Although Al2O3 films obtained with plasma enhanced atomic layer deposition (PEALD) have been tested as passivation layers because of their excellent gas barrier properties, amorphous Al2O3 films are significantly corroded by water. In this study, we examined the deformation of PEALD Al2O3 films when immersed in water and attempted to fabricate a corrosion-resistant passivation film by using a PEALD-based Al2O3/TiO2 nanolamination (NL) technique. Our Al2O3/TiO2 NL films were found to exhibit excellent water anticorrosion and low gas permeation and require only low-temperature processing (<100 degrees C). Organic thin film transistors with excellent air-stability (52 days under high humidity (a relative humidity of 90% and a temperature of 38 degrees C)) were fabricated.
URI
http://hdl.handle.net/YU.REPOSITORY/32193http://dx.doi.org/10.1021/am500458d
ISSN
1944-8244
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공과대학 > 신소재공학부 > Articles
공과대학 > 화학공학부 > Articles
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