Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

Title
Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams
Author(s)
장자순김민우[김민우]정완길[정완길]조현[조현]배태성[배태성]장성진[장성진]홍웅기[홍웅기]김봉중[김봉중]
Keywords
DOPED VO2 NANOPARTICLES; PHASE-TRANSITION; THIN-FILMS; TEMPERATURE; SENSOR; NANOPLATELETS; SPECTROSCOPY; ORGANIZATION; NANOWIRES; DOMAINS
Issue Date
201506
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.5
Abstract
Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain.
URI
http://hdl.handle.net/YU.REPOSITORY/32082http://dx.doi.org/10.1038/srep10861
ISSN
2045-2322
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공과대학 > 전자공학과 > Articles
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