Influence of Annealing Temperature on Magnetoelectric Properties of CoFe2O4/Pt/Pb(Z(r0.3)T(i0.7)) O-3 Thin Films

Title
Influence of Annealing Temperature on Magnetoelectric Properties of CoFe2O4/Pt/Pb(Z(r0.3)T(i0.7)) O-3 Thin Films
Author(s)
이희영엄유정황성옥류정호[류정호]김종우[김종우]구창영이재열
Keywords
MAGNETIC-PROPERTIES; COMPOSITE FILMS
Issue Date
201406
Publisher
TAYLOR & FRANCIS LTD
Citation
FERROELECTRICS, v.465, no.1, pp.76 - 82
Abstract
CoFe2O4/Pt/Pb(Zr0.3Ti0.7)O-3 thin films were grown on Pt/Ti/SiO2/Si substrate in order to investigate the magnetoelectric properties of ferromagnetic/ferroelectric multilayer thin films. Thin Pt layer was introduced to prevent inter-diffusion between CoFe2O4 and Pb(Zr0.3Ti0.7)O-3 (PZT) layers. PZT thin film was grown directly on top of Pt substrate by utilizing sol-gel spin coating technique. In order to investigate the possible annealing effect on film microstructure and magnetoelectric properties, multilayer thin film stack was heat-treated at different temperatures ranging from 550 degrees C to 650 degrees C. The structural properties of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Ferroelectric and ferromagnetic behaviors were analyzed by measuring polarization and magnetization - electric and magnetic field hysteresis. Magnetoelectric coefficients were calculated by measuring magnetoelectric voltages using magnetoelectric measurement system. Both the magnetoelectric properties and the coupling effect of CoFe2O4/Pt/PZT films on ferromagnetic and magnetoelectric properties are discussed as a function of heat-treatment temperature.
URI
http://hdl.handle.net/YU.REPOSITORY/32081http://dx.doi.org/10.1080/00150193.2014.894370
ISSN
0015-0193
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공과대학 > 신소재공학부 > Articles
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