Realization of electrically stable organic field-effect transistors using simple polymer blended dielectrics

Title
Realization of electrically stable organic field-effect transistors using simple polymer blended dielectrics
Author(s)
김세현김경훈[김경훈]함석규[함석규]김예별[김예별]김상원[김상원]박찬언[박찬언]
Keywords
THIN-FILM TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; BIAS STRESS; THRESHOLD VOLTAGE; PHASE-SEPARATION; SURFACE-ENERGY; STABILITY; PERFORMANCE; MORPHOLOGY; DENSITY
Issue Date
201506
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v.21, pp.111 - 116
Abstract
Organic field-effect transistors (OFETs) were fabricated using polymer blended gate dielectrics in an effort to enhance the electrical stability against a gate bias stress. A poly(melamine-co-formaldehyde) acrylated (PMFA) gate dielectric layer with great insulating properties was blended with polypentafluorostyrene (PFS), a type of hydrophobic fluorinated polymer. Although the overall electrical performance dropped slightly due to the rough and hydrophobic surfaces of the blend films, at the blend ratio (10%), the OFET's threshold voltage shift under a sustained gate bias stress applied over 3 h decreased remarkably compared with an OFET based on a PMFA dielectric alone. This behavior was attributed to the presence of the hydrophobic and electrically stable PFS polymer, which provided a low interfacial trap density between the gate dielectric and the semiconductor. A stretched exponential function model suggested that the energetic barrier to create trap states was high, and the distribution of energetic barrier heights was narrow in devices prepared with PFS. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/32079http://dx.doi.org/10.1016/j.orgel.2015.03.005
ISSN
1566-1199
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공과대학 > 화학공학부 > Articles
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