Development of High Energy Capacitors Using La-Doped PbZrO3 Anti-Ferroelectric Thin Films

Title
Development of High Energy Capacitors Using La-Doped PbZrO3 Anti-Ferroelectric Thin Films
Author(s)
이희영구창영엄유정황성옥정현석염정훈[염정훈]이재열
Keywords
STORAGE PERFORMANCE; PHASE
Issue Date
201406
Publisher
TAYLOR & FRANCIS LTD
Citation
FERROELECTRICS, v.465, no.1, pp.89 - 95
Abstract
Chemical solution-derived anti-ferroelectric (AFE) thin films for energy storage devices were investigated. In order to evaluate dielectric properties(dielectric constant and loss, leakage current density), anti-ferroelectric properties(energy storage density and loss, energy storage efficiency) of anti-ferroelectric thin films with lanthanum (La) as a dopant, approximate to 1m-thick anti-ferroelectric (PbLa)ZrO3 (PLZO) films as a function of La doping concentration (0 approximate to 6mol.%) were deposited on Pt/Ti/SiO2/Si substrate. With the increase of La-doping concentration, the energy storage loss was reduced from approximate to 8.8 J/cm(3) to approximate to 6.6 J/cm(3), and the efficiency was increased from approximate to 59.2% to approximate to 80.7%. In terms of the lowest leakage current density, the maximum energy storage performance was observed in La 2mol.% doped PLZO thin film capacitor with the energy storage density approximate to 16.9 J/cm(3), energy loss approximate to 8.4 J/cm(3) and energy storage efficiency approximate to 66.8% at an applied electric field approximate to 1 MV/cm with frequency approximate to 1kHz at room temperature.
URI
http://hdl.handle.net/YU.REPOSITORY/32036http://dx.doi.org/10.1080/00150193.2014.894386
ISSN
0015-0193
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공과대학 > 신소재공학부 > Articles
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