Effects of Grain Size in Sequential Lateral Solidification Processed on Active Matrix Organic Light Emitting Diode Displays

Title
Effects of Grain Size in Sequential Lateral Solidification Processed on Active Matrix Organic Light Emitting Diode Displays
Author(s)
전찬욱김무진[김무진]김경보[김경보]진광해[진광해]김성철[김성철]
Keywords
THIN-FILM TRANSISTORS; TFTS; PERFORMANCE
Issue Date
201406
Publisher
ELECTROCHEMICAL SOC INC
Citation
ECS SOLID STATE LETTERS, v.3, no.8, pp.R40 - R43
Abstract
In this work, we investigated the correlation between the spacing of primary grain boundaries in sequential lateral solidification (SLS) polycrystalline silicon and the brightness non-uniformity of active matrix organic light emitting diode panels. The oblique line is attributed both to the SLS method and the thin film transistor fabrication process. We found that the oblique line type of brightness non-uniformity disappeared when the spacing of primary grain boundaries is exactly the same in the individual transistor channel or when the non-uniform size is between 2.7 and 3.3 mu m (Delta L-g < +/- 10%) in active patterns. (C) 2014 The Electrochemical Society. [DOI: 10.1149/2.0071408ssl] All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/32020http://dx.doi.org/10.1149/2.0071408ssl
ISSN
2162-8742
Appears in Collections:
공과대학 > 화학공학부 > Articles
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