Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

Title
Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
Author(s)
신현욱[신현욱]이상준[이상준]김두근[김두근]배명호[배명호]허재영[허재영]최경진[최경진]최원준[최원준]최정우[최정우]신재철
Keywords
SOLAR-CELLS; INTEGRATION; SILICON; SI(100); DEVICES; REGION
Issue Date
201506
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.5
Abstract
One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 mu m) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 mu m provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 x 10(8) cm.Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.
URI
http://hdl.handle.net/YU.REPOSITORY/31989http://dx.doi.org/10.1038/srep10764
ISSN
2045-2322
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이과대학 > 물리학과 > Articles
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