Solid-state selenization of printed Cu(In,Ga)S-2 nanocrystal layer and its impact on solar cell performance

Title
Solid-state selenization of printed Cu(In,Ga)S-2 nanocrystal layer and its impact on solar cell performance
Author(s)
전찬욱박상욱김덕인이태석[이태석]이계웅[이계웅]윤여권[윤여권]조양휘[조양휘]김재홍[김재홍]안경민[안경민]이경준[이경준]
Keywords
INKS
Issue Date
201406
Publisher
ELSEVIER SCIENCE BV
Citation
SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.125, pp.66 - 71
Abstract
Cu(In,Ga)S(2)nanopowder was printed on Mo-coated sodalime glass substrates and selenized from a Se-coated cover glass. The selenized Cu(In,Ga)(Se,S)(2) film consisted of three layers with a different morphologies and micro-structures. Although the top layer showed large grains recrystallized from nanocrystals, the bottom layer was almost identical to the original precursor. The middle layer, as a thin boundary layer was found to be a mixture of carbon and Cu sulfoselenide. At a higher Se thickness (> 1.2 mu m), a lower fill factor and short circuit current density were obtained, which might result from the accumulation of a Cu secondary phase. The solar cell, which consisted of Al2O3:ZnO/i-ZnO/CdS/Cu(In,Ga)(S,Se)/Mo/glass using the selenized absorber, showed the following properties: efficiency=8.28%, J(sc)=26.14 mA/cm(2), V-oc=0.483 V, and fill factor=65.58% for AMG1.5 at 25 degrees C. (C) 2014 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/31918http://dx.doi.org/10.1016/j.solmat.2014.02.019
ISSN
0927-0248
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공과대학 > 화학공학부 > Articles
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