Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability

Title
Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
Author(s)
김혜경박찬언[박찬언]김세현김경훈[김경훈]
Keywords
THIN-FILM TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; TRIETHYLSILYLETHYNYL-ANTHRADITHIOPHENE; PERFORMANCE; FABRICATION; DENSITY; GROWTH
Issue Date
201507
Publisher
ROYAL SOC CHEMISTRY
Citation
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.17, no.26, pp.16791 - 16797
Abstract
The electrical stabilities of low-voltage organic field-effect transistors (OFETs) were improved by applying graftable fluorinated polymer (gPFS) layers onto poly(4-vinyl phenol)-based cross-linked dielectrics (cPVP). As a result, a smooth and hydrophobic surface was formed, and the dielectric film displayed a low-leakage current density. The chemisorbed gPFS groups enabled the solution processing of an overlying 5,11-bis(triethylsilylethynyl)anthradithiophene semiconductor, which formed favorable terrace-like crystalline structures after solvent annealing. The top-contact OFETs showed superior operational stability compared to cPVP-based OFETs. Hysteresis was negligible, and the off-current of the transfer curve was one order of magnitude lower than that obtained from cPVP-based OFETs. The threshold voltage shift measured after a sustained gate bias stress for 1 h decreased significantly after introduction of the hydrophobic gPFS treatment; the energetic barrier to creating charge trapping sites increased, and the trap distribution narrowed, as supported by the stretched exponential function model.
URI
http://hdl.handle.net/YU.REPOSITORY/31634http://dx.doi.org/10.1039/c5cp01909e
ISSN
1463-9076
Appears in Collections:
공과대학 > 신소재공학부 > Articles
공과대학 > 화학공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE