Non-Stoichiometric Indium Zinc Tin Oxide Thin Films Prepared by RF Magnetron Sputtering

Title
Non-Stoichiometric Indium Zinc Tin Oxide Thin Films Prepared by RF Magnetron Sputtering
Author(s)
이희영김기환마리야느푸트리이혜지구창영이정아[이정아]김정주[김정주]
Keywords
SUBSTRATE-TEMPERATURE; GROWTH; ZN; SN; STABILITY; ELECTRODE
Issue Date
201508
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.10, no.4, pp.541 - 545
Abstract
Indium zinc tin oxide (IZTO) thin films were assessed as a possible alternative to indium tin oxide (ITO) thin films. Two non-stoichiometric IZTO thin films based on In0.4Zn0.3Sn0.3O1.5 (IZTO30), i.e., In0.4Zn0.35Sn0.25O1.5 (Zn-rich IZTO30) and In0.4Zn0.25Sn0.35O1.5 (Sn-rich IZTO30), were deposited by RF magnetron sputtering using ceramic targets with the same nominal composition. During deposition, the substrate temperature was kept at 400 degrees C, and the other processing variables, such as Ar flow rate and RF power, were fixed to 20 sccm and 125 W, respectively. The properties of the resulting films were examined as a function of the annealing temperature ranging from 150 to 450 degrees C. In addition, the effect of the annealing environment was also investigated. Sn-rich IZTO films showed the lowest resistivity of 3.4x10(-4) Omega.cm after annealing at 450 degrees C in either argon(1) or the forming gas. The Zn-rich IZTO30 films always showed slightly higher resistivity. The effects of the annealing treatment on the structural, optical and electrical properties of the non-stoichiometric IZTO30 thin films are discussed.
URI
http://hdl.handle.net/YU.REPOSITORY/31475http://dx.doi.org/10.1166/jno.2015.1798
ISSN
1555-130X
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공과대학 > 신소재공학부 > Articles
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