Structural, Optical, and Electrical Properties of ZnO Thin Films Deposited by Sol-Gel Dip-Coating Process at Low Temperature

Title
Structural, Optical, and Electrical Properties of ZnO Thin Films Deposited by Sol-Gel Dip-Coating Process at Low Temperature
Author(s)
김종수Soaram Kim[Soaram Kim]Giwoong Nam[Giwoong Nam]Hyunsik Yoon[Hyunsik Yoon]Hyunggil Park[Hyunggil Park]Hyonkwang Choi[Hyonkwang Choi]Jin Soo Kim[Jin Soo Kim]Do Yeob Kim[Do Yeob Kim]Sung-O Kim[Sung-O Kim]Jae-Young Leem[Jae-Young Leem]
Keywords
CHEMICAL-VAPOR-DEPOSITION; HYDROTHERMAL METHOD; CRYOGENIC TEMPERATURE; SPRAY-PYROLYSIS; BAND-GAP; GROWTH; NANOSTRUCTURES; SUBSTRATE; SILICON; AL
Issue Date
201407
Publisher
KOREAN INST METALS MATERIALS
Citation
ELECTRONIC MATERIALS LETTERS, v.10, no.4, pp.869 - 878
Abstract
Sol-gel dip-coating was used to prepare ZnO thin films with relaxed residual stress by lowering the deposition temperature from room temperature (25 degrees C) to -25 degrees C. The effect of deposition temperature on the structural, optical, and electrical properties of the films was characterized using scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL), ultraviolet-visible (UV-Vis) spectroscopy and reflectance accessory, and the van der Pauw method. All the thin films were deposited successfully onto quartz substrates and exhibited fibrous root morphology. At low temperature, the deposition rate was higher than at room temperature (RT) because of enhanced viscosity of the films. Further, lowering the deposition temperature affected the structural, optical, and electrical properties of the ZnO thin films. The surface morphology, residual stress, PL properties, and optical transmittance and reflectance of the films were measured, and this information was used to determine the absorption coefficient, optical band gap, Urbach energy, refractive index, refractive index at infinite wavelength, extinction coefficient, single-oscillator energy, dispersion energy, average oscillator wavelength, moments M-1 and M-3, dielectric constant, optical conductivity, and electrical resistivity of the ZnO thin films.
URI
http://hdl.handle.net/YU.REPOSITORY/31449http://dx.doi.org/10.1007/s13391-013-3312-y
ISSN
1738-8090
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이과대학 > 물리학과 > Articles
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