Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

Title
Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon
Author(s)
정유진김우경정재학
Keywords
MODEL; MELT; NUCLEATION; TRANSPORT; BREAKDOWN
Issue Date
201408
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.65, no.3, pp.362 - 367
Abstract
The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and lowcost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11-13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.
URI
http://hdl.handle.net/YU.REPOSITORY/31347http://dx.doi.org/10.3938/jkps.65.362
ISSN
0374-4884
Appears in Collections:
중앙도서관 > rims journal
공과대학 > 화학공학부 > Articles
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