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dc.contributor.author이희영ko
dc.contributor.author엄유정ko
dc.contributor.author황성옥ko
dc.contributor.author구창영ko
dc.contributor.author이재열ko
dc.contributor.author류정호[류정호]ko
dc.contributor.author박정민[박정민]ko
dc.date.accessioned2015-12-17T04:06:59Z-
dc.date.available2015-12-17T04:06:59Z-
dc.date.created2015-11-13-
dc.date.issued201408-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.65, no.3, pp.342 - 345-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/YU.REPOSITORY/31329-
dc.identifier.urihttp://dx.doi.org/10.3938/jkps.65.342-
dc.description.abstractCoFe2O4(CoFO)/Pt/Pb(Zr0.52Ti0.48)O-3 (PZT) multilayer films were grown on Pt/Ti/SiO2/Si substrates. A thin Pt layer was inserted between the ferrimagnetic and the ferroelectric layers in order to suppress diffusion at high temperatures and thereby to prevent possible interfacial reactions. The effect of annealing on the film's microstructure and multiferroic properties was then investigated using thin film stacks heat-treated at temperatures ranging from 550 to 650 A degrees C. The magnetoelectric coefficients were calculated from the magnetoelectric voltages measured using a magnetoelectric measurement system. The effect of annealing temperature on the magnetoelectric coupling in the CoFO/Pt/PZT multilayer thin film is discussed in detail.-
dc.language영어-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectBILAYER THIN-FILMS-
dc.subjectMULTIFERROIC PROPERTIES-
dc.subjectMAGNETIC-PROPERTIES-
dc.subjectCOMPOSITE-
dc.titleEffect of annealing temperature on the magnetoelectric properties of CoFe2O4/Pt/Pb(Zr0.52Ti0.48)O-3 multilayer films-
dc.typeArticle-
dc.identifier.wosid000340490000013-
dc.identifier.scopusid2-s2.0-84907359155-
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공과대학 > 신소재공학부 > Articles
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