Growth and characterization of dilute nitride GaNxP1-x nanowires and GaNxP1-x/GaNyP1-y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Title
Growth and characterization of dilute nitride GaNxP1-x nanowires and GaNxP1-x/GaNyP1-y core/shell nanowires on Si (111) by gas source molecular beam epitaxy
Author(s)
장자순S. Sukrittanon[S. Sukrittanon]Y. J. Kuang[Y. J. Kuang]A. Dobrovolsky[A. Dobrovolsky]강원모[강원모]김봉중[김봉중]W. M. Chen[W. M. Chen]I. A. Buyanova[I. A. Buyanova]C. W. Tu[C. W. Tu]
Keywords
OPTICAL-ABSORPTION ENHANCEMENT; BAND-GAP; TEMPERATURE-DEPENDENCE; GAN(X)P1-X ALLOYS; SILICON NANOWIRE; SOLAR-CELLS; ENERGY-GAP; SINGLE; SEMICONDUCTORS; CROSSOVER
Issue Date
201408
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.105, no.7
Abstract
We have demonstrated self-catalyzed GaNxP1-x and GaNxP1-x/GaNyP1-y core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaNxP1-x nanowires was observed to be comparable to that of GaP nanowires (similar to 585 degrees C to similar to 615 degrees C). Transmission electron microscopy showed a mixture of cubic zincblende phase and hexagonal wurtzite phase along the [111] growth direction in GaNxP1-x nanowires. A temperature-dependent photoluminescence (PL) study performed on GaNxP1-x/GaNyP1-y core/shell nanowires exhibited an S-shape dependence of the PL peaks. This suggests that at low temperature, the emission stems from N-related localized states below the conduction band edge in the shell, while at high temperature, the emission stems from band-to-band transition in the shell as well as recombination in the GaNxP1-x core. (C) 2014 AIP Publishing LLC.
URI
http://hdl.handle.net/YU.REPOSITORY/31254http://dx.doi.org/10.1063/1.4893745
ISSN
0003-6951
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공과대학 > 전자공학과 > Articles
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