Nano-Scale SiO2 Patterned n-Type GaN Substrate for 380 nm Ultra Violet Light Emitting Diodes

Title
Nano-Scale SiO2 Patterned n-Type GaN Substrate for 380 nm Ultra Violet Light Emitting Diodes
Author(s)
Min Sung Jo[Min Sung Jo]Hyo Won Seo[Hyo Won Seo]Wael Z. Tawfik[Wael Z. Tawfik]Seung Bea Yang[Seung Bea Yang]Jung Ju Lee[Jung Ju Lee]Sang Wan Ryu[Sang Wan Ryu]Jun Seok Ha[Jun Seok Ha]Seong Ran Jeon[Seong Ran Jeon]최호박시현June Key Lee[June Key Lee]
Keywords
SAPPHIRE; ENHANCEMENT; EFFICIENCY; FILMS
Issue Date
201408
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.8, pp.6108 - 6111
Abstract
380 nm Ultraviolet (UV) light emitting diodes (LEDs) were grown on patterned n-type GaN substrate (PNS). Wet etched self-assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano dots by inductively coupled plasma etching. In the pre-experiment, crystal quality and optical properties of n-GaN were greatly improved by applying PNS process. In this work, etch-pits density (EPD) method confirmed that PNS with SiO2 nano dots have superior crystalline properties. Thus Reference LED without PNS, 1-step PNS LEDs with SiO2 nano dots size were 200 nm, 250 nm, 300 nm and 300 nm 2-step PNS LED were fabricated. LEDs show almost the same operating voltage of about 3.4 V at an injection current of 50 mA. Light intensity was enhanced by similar to 2.1 times and 3.2 times for 300 nm 1-step and 300 nm 2-step PNS, respectively. FDTD simulation results show a similar tendency. As a result, PNS promotes epitaxial lateral overgrowth (ELOG) for defect reduction as well as act as a light scattering point.
URI
http://hdl.handle.net/YU.REPOSITORY/31242http://dx.doi.org/10.1166/jnn.2014.8295
ISSN
1533-4880
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공과대학 > 전자공학과 > Articles
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