Fluorinated Polyimide Gate Dielectrics for the Advancing the Electrical Stability of Organic Field-Effect Transistors
- Fluorinated Polyimide Gate Dielectrics for the Advancing the Electrical Stability of Organic Field-Effect Transistors
- 김세현; 백용화[백용화]; 임수만; 유은주; 김래호[김래호]; 김혜경; 이승우; 박찬언[박찬언]
- THIN-FILM TRANSISTORS; SURFACE-ENERGY; PERFORMANCE; MONOLAYERS; GROWTH; ORDER
- Issue Date
- AMER CHEMICAL SOC
- ACS APPLIED MATERIALS & INTERFACES, v.6, no.17, pp.15209 - 15216
- Organic field-effect transistors (OFETs) that operated with good electrical stability were prepared by synthesizing fluorinated polyimide (PI) gate dielectrics based on 6FDA-PDA-PDA PI and 6FDA-CF3Bz-PDA PI. 6FDA-PDA-PDA PI and 6FDA-CF3Bz-PDA PI contain 6 and 18 fluorine atoms per repeat unit, respectively. These fluorinated polymers provided smooth surface topographies and surface energies that decreased as the number of fluorine atoms in the polymer backbone increased. These properties led to a better crystalline morphology in the semiconductor film grown over their surfaces. The number of fluorine atoms in the PI backbone increased, the field-effect mobility improved, and the threshold voltage shifted toward positive values (from -0.38 to +2.21 V) in the OFETs with pentacene and triethylsilylethynyl anthradithiophene. In addition, the highly fluorinated polyimide dielectric showed negligible hysteresis and a notable gate bias stability under both a N-2 environment and ambient air.
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