Fluorinated Polyimide Gate Dielectrics for the Advancing the Electrical Stability of Organic Field-Effect Transistors

Title
Fluorinated Polyimide Gate Dielectrics for the Advancing the Electrical Stability of Organic Field-Effect Transistors
Author(s)
김세현백용화[백용화]임수만유은주김래호[김래호]김혜경이승우박찬언[박찬언]
Keywords
THIN-FILM TRANSISTORS; SURFACE-ENERGY; PERFORMANCE; MONOLAYERS; GROWTH; ORDER
Issue Date
201409
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.6, no.17, pp.15209 - 15216
Abstract
Organic field-effect transistors (OFETs) that operated with good electrical stability were prepared by synthesizing fluorinated polyimide (PI) gate dielectrics based on 6FDA-PDA-PDA PI and 6FDA-CF3Bz-PDA PI. 6FDA-PDA-PDA PI and 6FDA-CF3Bz-PDA PI contain 6 and 18 fluorine atoms per repeat unit, respectively. These fluorinated polymers provided smooth surface topographies and surface energies that decreased as the number of fluorine atoms in the polymer backbone increased. These properties led to a better crystalline morphology in the semiconductor film grown over their surfaces. The number of fluorine atoms in the PI backbone increased, the field-effect mobility improved, and the threshold voltage shifted toward positive values (from -0.38 to +2.21 V) in the OFETs with pentacene and triethylsilylethynyl anthradithiophene. In addition, the highly fluorinated polyimide dielectric showed negligible hysteresis and a notable gate bias stability under both a N-2 environment and ambient air.
URI
http://hdl.handle.net/YU.REPOSITORY/30949http://dx.doi.org/10.1021/am5035076
ISSN
1944-8244
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공과대학 > 화학공학부 > Articles
공과대학 > 신소재공학부 > Articles
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