Characteristics of Ion Beam Assisted ITO Thin Films Deposited by RF Magnetron Sputtering

Title
Characteristics of Ion Beam Assisted ITO Thin Films Deposited by RF Magnetron Sputtering
Author(s)
곽진석허경찬손필국[손필국]손영구이종훈권진혁
Keywords
INDIUM OXIDE-FILMS; OPTICAL-PROPERTIES; LOW-RESISTIVITY; EVAPORATION
Issue Date
201409
Publisher
TAYLOR & FRANCIS LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.601, no.1, pp.57 - 63
Abstract
Indium tin oxide (ITO) thin films have been deposited onto glass substrates at low temperature (100 degrees C) by the ion beam assisted RF magnetron sputter technique at different ion beam energy. The structural, surface morphology and electrical characteristics of the ITO thin films were investigated as a function of ion beam assisted energy. With increasing ion beam assisted energy from 0eV to 100eV, electrical resistivity of the ITO films reduced from 1.13 x 10(-3) omega center dot cm to 5.5 x 10(-4) omega center dot cm. Hall mobility and carrier concentration slightly increased, which attribute to slightly the crystal growth and harden ITO film. The preferential crystalline orientation of the sputtered films is observed gradually a change from the (222) to the (400) crystalline orientation with increasing ion beam assisted energy.
URI
http://hdl.handle.net/YU.REPOSITORY/30847http://dx.doi.org/10.1080/15421406.2014.940493
ISSN
1542-1406
Appears in Collections:
이과대학 > 물리학과 > Articles
이과대학 > 화학생화학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE