Reduction and nitridation of graphene oxide (GO) films at room temperature using inductively coupled NH3 plasma

Title
Reduction and nitridation of graphene oxide (GO) films at room temperature using inductively coupled NH3 plasma
Author(s)
박진호김홍탁김창득
Issue Date
201410
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
VACUUM, v.108, pp.35 - 38
Abstract
Graphene oxide (GO) films were treated at room temperature by inductively coupled NH3 plasma. Oxygen functional groups on the surface of GO films were rapidly removed in less than 10 min, and nitrogen components were incorporated into the vacancies of oxygen groups. The ratio of [N/C] was reached to 9% and [O/C] was reduced from 45% to 25% within 10 min. Otherwise, the electrical conductivity of reduced GO (r-GO) films was gradually increased from 100 to 1666 S/m with plasma treatment time. From these results, it was conjectured that the defects on sp(2) domains of GO films were consistently recovered after the saturation of [N/C] and [O/C] ratios. The process developed in this study is suitable for a very simple, scalable, eco-friendly and rapid surface-modification technique operating at room temperature. (C) 2014 Elsevier Ltd. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/30629http://dx.doi.org/10.1016/j.vacuum.2014.05.018
ISSN
0042-207X
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공과대학 > 화학공학부 > Articles
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