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dc.contributor.author김수현ko
dc.contributor.authorShanmugam Parthiban[Shanmugam Parthiban]ko
dc.contributor.author권장연[권장연]ko
dc.date.accessioned2015-12-17T03:55:27Z-
dc.date.available2015-12-17T03:55:27Z-
dc.date.created2015-11-13-
dc.date.issued201410-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.1028 - 1030-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/YU.REPOSITORY/30628-
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2014.2345740-
dc.description.abstractWe have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al2O3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250 degrees C exhibited a saturation field effect mobility of 32.3 cm(2)/V.s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 x 10(7). Moreover, the a-CIZO TFTs showed with a good bias stability.-
dc.language영어-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectCARRIER TRANSPORT-
dc.subjectSEMICONDUCTORS-
dc.subjectCERAMICS-
dc.titleSputtered Deposited Carbon-Indium-Zinc Oxide Channel Layers for Use in Thin-Film Transistors-
dc.typeArticle-
dc.identifier.wosid000343011300018-
dc.identifier.scopusid2-s2.0-84907606337-
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공과대학 > 신소재공학부 > Articles
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