Sputtered Deposited Carbon-Indium-Zinc Oxide Channel Layers for Use in Thin-Film Transistors

Title
Sputtered Deposited Carbon-Indium-Zinc Oxide Channel Layers for Use in Thin-Film Transistors
Author(s)
김수현Shanmugam Parthiban[Shanmugam Parthiban]권장연[권장연]
Keywords
CARRIER TRANSPORT; SEMICONDUCTORS; CERAMICS
Issue Date
201410
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.1028 - 1030
Abstract
We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al2O3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250 degrees C exhibited a saturation field effect mobility of 32.3 cm(2)/V.s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 x 10(7). Moreover, the a-CIZO TFTs showed with a good bias stability.
URI
http://hdl.handle.net/YU.REPOSITORY/30628http://dx.doi.org/10.1109/LED.2014.2345740
ISSN
0741-3106
Appears in Collections:
공과대학 > 신소재공학부 > Articles
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