The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics

Title
The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
Author(s)
김세현김지예[김지예]장재영[장재영]김경훈[김경훈]김혜경박찬언[박찬언]
Keywords
SURFACE; CIRCUITS; MOBILITY; CHAIN
Issue Date
201411
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.26, no.42, pp.7241 - 7246
URI
http://hdl.handle.net/YU.REPOSITORY/30515http://dx.doi.org/10.1002/adma.201402363
ISSN
0935-9648
Appears in Collections:
공과대학 > 화학공학부 > Articles
공과대학 > 신소재공학부 > Articles
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