Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

Title
Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films
Author(s)
전기석[전기석]신승욱[신승욱]조재승[조재승]김명상[김명상]신재철정채환[정채환]임준형[임준형]송준호[송준호]허재영[허재영]김진혁[김진혁]
Keywords
ROOM-TEMPERATURE; TRANSISTORS; SEMICONDUCTOR; DEPOSITION; INGAZNO
Issue Date
201411
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.14, no.11, pp.1591 - 1595
Abstract
High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices. (C) 2014 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/30513http://dx.doi.org/10.1016/j.cap.2014.08.022
ISSN
1567-1739
Appears in Collections:
이과대학 > 물리학과 > Articles
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