Grafting Fluorinated Polymer Nano layer for Advancing the Electrical Stability of Organic Field-Effect Transistors
- Grafting Fluorinated Polymer Nano layer for Advancing the Electrical Stability of Organic Field-Effect Transistors
- 김경훈[김경훈]; 안태규[안태규]; 김지예[김지예]; 정용진[정용진]; 장재영[장재영]; 김혜경; 백장열[백장열]; 김윤희[김윤희]; 김세현; 박찬언[박찬언]
- SELF-ASSEMBLED MONOLAYERS; THIN-FILM TRANSISTORS; THRESHOLD VOLTAGE SHIFTS; GATE DIELECTRICS; SURFACE VISCOELASTICITY; PERFORMANCE; PENTACENE; SILICON; GROWTH; SEMICONDUCTORS
- Issue Date
- AMER CHEMICAL SOC
- CHEMISTRY OF MATERIALS, v.26, no.22, pp.6467 - 6476
- With the goal of achieving high-performance electrically stable organic field-effect transistors (OFETs), we chemically graft a fluorinated polymer nanolayer onto the polar oxide dielectric surfaces via a simple and easy fabrication process in ambient air. The para-fluorine-thiol click reaction between poly(pentafluorostyrene) (PFS) and mercaptopropyltrimethoxysilane is used to synthesize a graftable fluorinated polymer (gPFS). The surface characteristics of the gPFS-treated SiO2 dielectrics and the crystal structure and grain growth of the overlying organic semiconductors are investigated. Various semiconductor materials are employed for the OFETs prepared with gPFS-treated SiO2 dielectrics, including vacuum-processed pentacene, N,N-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide, solution-processed 5,11-bis(triethylsilylethynyl)anthradithiophene, and poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-(E)-1,2-di(2,2'-bithiophen-5-yl)ethane. Three OFETs are prepared with different dielectrics: (i) bare SiO2, (ii) gPFS-treated SiO2, and (iii) perfluorooctyltriethoxysilane-treated SiO2. The OFETs prepared with the gPFS-treated SiO2 dielectrics display the highest mobilities and smallest hysteresis. Furthermore, the gPFS-treated SiO2 provides the best device stability under a sustained gate bias, suggesting that the gPFS surface minimize the number of traps present in the OFET.
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